PART |
Description |
Maker |
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
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ON Semiconductor
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2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor -1A /-60V Bipolar transistor Low switching noise.
|
Rohm
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IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
KT234510 KT234505 |
Split-dual bipolar transistor module. 100A, 600V. Split-Dual Bipolar Power Module (100 Amperes/600 Volts)
|
POWEREX[Powerex Power Semiconductors] Powerex Power Semicondu...
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GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA[Toshiba Semiconductor]
|
2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Low Vce(sat) Transistor (-20V, -3A) From old datasheet system Low VCE(sat) Transistor(低VCE(sat)晶体 Low Vce(sat) Transistor (-20V/ -3A)
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ROHM[Rohm] Rohm CO.,LTD.
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AD70402 AD704AN AD704 AD704JR-_REEL AD704TQ_883B A |
-18V; quad picoampere inout current bipolar Op Amp. For industrial/process controls, weigh scales Quad Picoampere Input Current Bipolar Op Amp OP-AMP|QUAD|BIPOLAR|SOP|16PIN|PLASTIC
|
Analog Devices
|
IRGB4059DPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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IRF[International Rectifier]
|
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
2SD1802S-E 2SD1802S-TL-E 2SD1802T-E 2SD1802T-TL-E |
Bipolar Transistor Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
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International Rectifier, Corp. IRF[International Rectifier]
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